JANTXV2N6851

JANTXV2N6851图片1
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JANTXV2N6851概述

Trans MOSFET P-CH 200V 4A 3Pin TO-39

200V, P-CHANNEL

The HEXFETtechnology is the key to ’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt

age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

JANTXV2N6851中文资料参数规格
技术参数

耗散功率 25 W

产品系列 IRFF9230

输入电容Ciss 700pF @25VVds

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 25000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-39

外形尺寸

高度 4.54 mm

封装 TO-39

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JANTXV2N6851
型号: JANTXV2N6851
制造商: International Rectifier 国际整流器
描述:Trans MOSFET P-CH 200V 4A 3Pin TO-39

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