Trans GP BJT NPN 50V 0.8A 4Pin UA
Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N2222AUA Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTXV2N2222AUA 美高森美 | 完全替代 | JANTX2N2222AUA和JANTXV2N2222AUA的区别 |
JAN2N2222AUA 美高森美 | 完全替代 | JANTX2N2222AUA和JAN2N2222AUA的区别 |
2N2222AUA 美高森美 | 类似代替 | JANTX2N2222AUA和2N2222AUA的区别 |