硅PNP功率晶体管 Silicon PNP Power Transistors
Design various electronic circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JAN2N3868 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N3868S 美高森美 | 完全替代 | JAN2N3868和JANTX2N3868S的区别 |
JAN2N3868S 美高森美 | 完全替代 | JAN2N3868和JAN2N3868S的区别 |
JANTXV2N3868S 美高森美 | 完全替代 | JAN2N3868和JANTXV2N3868S的区别 |