NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR
Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
JANTXV2N5665 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N5665 美高森美 | 完全替代 | JANTXV2N5665和2N5665的区别 |
JANS2N5665 美高森美 | 完全替代 | JANTXV2N5665和JANS2N5665的区别 |
JANTX2N6284 美高森美 | 功能相似 | JANTXV2N5665和JANTX2N6284的区别 |