硅PNP功率晶体管 Silicon PNP Power Transistors
The three terminals of this PNP GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N3868S Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N3868 美高森美 | 完全替代 | JANTX2N3868S和JANTX2N3868的区别 |
JAN2N3868 美高森美 | 完全替代 | JANTX2N3868S和JAN2N3868的区别 |
JAN2N3868S 美高森美 | 完全替代 | JANTX2N3868S和JAN2N3868S的区别 |