JANS1N4107UR-1

JANS1N4107UR-1图片1
JANS1N4107UR-1概述

硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435

• LEADLESS PACKAGE FOR SURFACE MOUNT

• LOW CURRENT OPERATION AT 250 µA

• METALLURGICALLY BONDED

MAXIMUM RATINGS

Junction and Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ TEC= +125°C

Power Derating: 10mW/ °C above TEC= +125°C

Forward Derating @ 200 mA: 1.1 Volts maximum


贸泽:
Zener Diodes Voltage Regulator


艾睿:
The best way to operate a diode in the reverse-breakdown region in your circuit is by using a voltage regulator JANS1N4107UR-1 zener diode from Microsemi. Its maximum power dissipation is 500 mW. This device has a maximum regulator current of 29 mA. Its maximum leakage current is 0.05 μA. Its test current is 0.25 mA. This zener diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. This zener device has a nominal voltage of 13 V and a voltage tolerance of 5%. It is made in a single configuration.


Chip1Stop:
Diode Zener Single 13V 5% 500mW 2-Pin DO-213AA


JANS1N4107UR-1中文资料参数规格
技术参数

耗散功率 500 mW

测试电流 0.25 mA

稳压值 13 V

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 DO-213AA-2

外形尺寸

长度 3.7 mm

封装 DO-213AA-2

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

数据手册

在线购买JANS1N4107UR-1
型号: JANS1N4107UR-1
制造商: Microsemi 美高森美
描述:硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES

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