Trans GP BJT NPN 50V 0.8A 4Pin UA
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTXV2N2222AUA Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N2222AUA 美高森美 | 完全替代 | JANTXV2N2222AUA和JANTX2N2222AUA的区别 |
2N2222ACSM4 Semelab | 功能相似 | JANTXV2N2222AUA和2N2222ACSM4的区别 |
JANS2N2222AUA Semicoa Semiconductor | 功能相似 | JANTXV2N2222AUA和JANS2N2222AUA的区别 |