Trans GP BJT NPN 60V 0.03A 6Pin TO-78
Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTXV2N2920 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N2920 美高森美 | 完全替代 | JANTXV2N2920和JANTX2N2920的区别 |
JANS2N2920 美高森美 | 完全替代 | JANTXV2N2920和JANS2N2920的区别 |
JANTXV2N2919 美高森美 | 完全替代 | JANTXV2N2920和JANTXV2N2919的区别 |