JANS2N2907AUA

JANS2N2907AUA图片1
JANS2N2907AUA概述

Trans GP BJT PNP 60V 0.6A 4Pin UA

This PNP general purpose bipolar junction transistor from s is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

JANS2N2907AUA中文资料参数规格
封装参数

引脚数 4

其他

EU RoHS Not Compliant

Part Status Active

Automotive No

Pin Count 4

Mounting Surface Mount

Package Height 1.9Max

Package Length 5.71Max

Package Width 3.93Max

PCB changed 4

符合标准

RoHS标准 Non-Compliant

数据手册

在线购买JANS2N2907AUA
型号: JANS2N2907AUA
制造商: Semicoa Semiconductor
描述:Trans GP BJT PNP 60V 0.6A 4Pin UA
替代型号JANS2N2907AUA
型号/品牌 代替类型 替代型号对比

JANS2N2907AUA

Semicoa Semiconductor

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当前型号

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