JANTXV2N3715

Trans GP BJT NPN 60V 10A 3Pin2+Tab TO-3

The NPN general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.