NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
JANTX2N3055 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N3055G 安森美 | 功能相似 | JANTX2N3055和2N3055G的区别 |
2N3055AG 安森美 | 功能相似 | JANTX2N3055和2N3055AG的区别 |
2N3055 Taitron | 功能相似 | JANTX2N3055和2N3055的区别 |