NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 6 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N3584 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N5038G 安森美 | 功能相似 | JANTX2N3584和2N5038G的区别 |
2N3771G 安森美 | 功能相似 | JANTX2N3584和2N3771G的区别 |
2N5302G 安森美 | 功能相似 | JANTX2N3584和2N5302G的区别 |