Trans GP BJT NPN 350V 8A 3Pin2+Tab TO-3
Design various electronic circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 8 V. Its maximum power dissipation is 125000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 8 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N6308 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N6284 美高森美 | 类似代替 | JANTX2N6308和JANTX2N6284的区别 |
JANTX2N6277 美高森美 | 类似代替 | JANTX2N6308和JANTX2N6277的区别 |
2N6341 美高森美 | 类似代替 | JANTX2N6308和2N6341的区别 |