JAN2N6286

JAN2N6286图片1
JAN2N6286概述

Trans Darlington PNP 80V 20A 175000mW 3Pin2+Tab TO-3

This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV level.  This TO-204AA isolated package features a 180 degree lead orientation.


艾睿:
Amplify your current using Microsemi&s;s PNP JAN2N6286 Darlington transistor in order to yield a higher current gain. This Darlington transistor array&s;s maximum emitter base voltage is 7 V, while its maximum base emitter saturation voltage is 4@200mA@20A V. This product&s;s maximum continuous DC collector current is 20 A, while its minimum DC current gain is 1500@1A@3 V|1250@10A@3V|300@20A@3V. It has a maximum collector emitter saturation voltage of 2@40mA@10A|3@200mA@20A V. Its maximum power dissipation is 175000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 175 °C.


Verical:
Trans Darlington PNP 80V 20A 175000mW 3-Pin2+Tab TO-3 Tray


JAN2N6286中文资料参数规格
技术参数

耗散功率 175 W

工作温度Max 175 ℃

工作温度Min -65 ℃

耗散功率Max 175000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

其他

产品生命周期 Active

包装方式 Tray

符合标准

RoHS标准 Non-Compliant

海关信息

ECCN代码 EAR99

数据手册

在线购买JAN2N6286
型号: JAN2N6286
制造商: Microsemi 美高森美
描述:Trans Darlington PNP 80V 20A 175000mW 3Pin2+Tab TO-3

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