JANTX2N2060

JANTX2N2060图片1
JANTX2N2060概述

规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR

FEATURES: ? UNITIZED DUAL NPN SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/270


艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, Microsemi&s;s NPN JANTX2N2060 general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.


Chip1Stop:
Trans GP BJT NPN 60V 0.5A 6-Pin TO-78


Verical:
Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-78 Bag


JANTX2N2060中文资料参数规格
技术参数

极性 NPN

耗散功率 0.6 W

击穿电压集电极-发射极 60 V

集电极最大允许电流 0.5A

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 600 mW

封装参数

安装方式 Through Hole

引脚数 6

封装 TO-78

外形尺寸

封装 TO-78

物理参数

材质 Silicon

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

数据手册

在线购买JANTX2N2060
型号: JANTX2N2060
制造商: Microsemi 美高森美
描述:规格化双NPN硅晶体管 UNITIZED DUAL NPN SILICON TRANSISTOR
替代型号JANTX2N2060
型号/品牌 代替类型 替代型号对比

JANTX2N2060

Microsemi 美高森美

当前型号

当前型号

JANTXV2N2060

美高森美

完全替代

JANTX2N2060和JANTXV2N2060的区别

JAN2N2060

美高森美

完全替代

JANTX2N2060和JAN2N2060的区别

JANTX2N2060L

美高森美

完全替代

JANTX2N2060和JANTX2N2060L的区别

锐单商城 - 一站式电子元器件采购平台