TO-78 NPN+PNP 40V 0.6A
This 2N4854 device in a 6-pin TO-78 package is military qualified up to a JANTXV level for high-reliability applications. also offers numerous other products to meet higher and lower power voltage regulation applications.
艾睿:
Compared to other transistors, the npn and PNP JANTX2N4854 general purpose bipolar junction transistor, developed by Microsemi, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
极性 NPN+PNP
耗散功率 600 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 600 mW
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 600 mW
安装方式 Through Hole
引脚数 6
封装 TO-78-6
封装 TO-78-6
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
JANTX2N4854 Microsemi 美高森美 | 当前型号 | 当前型号 |
JAN2N4854 美高森美 | 完全替代 | JANTX2N4854和JAN2N4854的区别 |
2N4854 美高森美 | 功能相似 | JANTX2N4854和2N4854的区别 |
JANTXV2N4854 美高森美 | 功能相似 | JANTX2N4854和JANTXV2N4854的区别 |