JANTX2N6650

JANTX2N6650图片1
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JANTX2N6650概述

TO-3 PNP 80V 10A

This high speed PNP transistor is rated at -10 amps and is military qualified up to the JANTXV level.  This TO-204AA isolated package features a 180 degree lead orientation.


得捷:
TRANS PNP DARL 80V 10A TO-3


艾睿:
Are traditional transistors not providing enough of a current gain? The PNP JANTX2N6650 Darlington transistor from Microsemi can help. This product&s;s maximum continuous DC collector current is 10 A, while its minimum DC current gain is 100@10A@3 V|1000@5A@3V|300@1A@3V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@0.1A@10A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.


Chip1Stop:
Trans Darlington PNP 80V 10A 3-Pin2+Tab TO-3


Verical:
Trans Darlington PNP 80V 10A 5000mW 3-Pin2+Tab TO-3 Tray


JANTX2N6650中文资料参数规格
技术参数

极性 PNP

耗散功率 5 W

击穿电压集电极-发射极 80 V

集电极最大允许电流 10A

最小电流放大倍数hFE 1000 @5A, 3V

额定功率Max 5 W

工作温度Max 175 ℃

工作温度Min -65 ℃

耗散功率Max 5000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

物理参数

工作温度 -65℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tray

符合标准

RoHS标准 Non-Compliant

含铅标准

海关信息

ECCN代码 EAR99

数据手册

在线购买JANTX2N6650
型号: JANTX2N6650
描述:TO-3 PNP 80V 10A
替代型号JANTX2N6650
型号/品牌 代替类型 替代型号对比

JANTX2N6650

Microsemi 美高森美

当前型号

当前型号

2N6328

美高森美

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JANTX2N6650和2N6328的区别

2N5877

美高森美

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JANTX2N6650和2N5877的区别

2N6275

美高森美

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JANTX2N6650和2N6275的区别

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