JANTX2N6052

JANTX2N6052图片1
JANTX2N6052图片2
JANTX2N6052图片3
JANTX2N6052图片4
JANTX2N6052图片5
JANTX2N6052概述

Trans Darlington PNP 100V 12A 150000mW 3Pin2+Tab TO-3

This high speed PNP transistor is rated at 12 amps and is military qualified per MIL-PRF-19500/501 up to a JANTXV level.  This TO-204AA isolated package features a 180 degree lead orientation.


艾睿:
This PNP JANTX2N6052 Darlington transistor from Microsemi amplifies your current and yields a much higher current gain than other transistors. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. This product&s;s maximum continuous DC collector current is 12 A, while its minimum DC current gain is 1000@1A@3 V|1000@6A@3V|150@12A@3V. It has a maximum collector emitter saturation voltage of 2@24mA@6A|3@120mA@12A V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 175 °C.


Chip1Stop:
Trans Darlington PNP 100V 12A 3-Pin2+Tab TO-3


Verical:
Trans Darlington PNP 100V 12A 150000mW 3-Pin2+Tab TO-3 Tray


JANTX2N6052中文资料参数规格
技术参数

耗散功率 150 W

击穿电压集电极-发射极 100 V

最小电流放大倍数hFE 1000 @6A, 3V

额定功率Max 150 W

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 150000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tray

符合标准

RoHS标准 Non-Compliant

含铅标准

海关信息

ECCN代码 EAR99

数据手册

在线购买JANTX2N6052
型号: JANTX2N6052
描述:Trans Darlington PNP 100V 12A 150000mW 3Pin2+Tab TO-3
替代型号JANTX2N6052
型号/品牌 代替类型 替代型号对比

JANTX2N6052

Microsemi 美高森美

当前型号

当前型号

JANTX2N6051

美高森美

类似代替

JANTX2N6052和JANTX2N6051的区别

2N6052G

安森美

功能相似

JANTX2N6052和2N6052G的区别

2N6050

Central Semiconductor

功能相似

JANTX2N6052和2N6050的区别

锐单商城 - 一站式电子元器件采购平台