JANTX2N6051

JANTX2N6051图片1
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JANTX2N6051概述

Trans Darlington PNP 80V 12A 150000mW 3Pin2+Tab TO-3

This high speed PNP transistor is rated at 12 amps and is military qualified per MIL-PRF-19500/501 up to a JANTXV level.  This TO-204AA isolated package features a 180 degree lead orientation.


艾睿:
Thanks to Microsemi&s;s PNP JANTX2N6051 Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This product&s;s maximum continuous DC collector current is 12 A, while its minimum DC current gain is 1000@1A@3 V|1000@6A@3V|150@12A@3V. It has a maximum collector emitter saturation voltage of 2@24mA@6A|3@120mA@12A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 175 °C.


Chip1Stop:
Trans Darlington PNP 80V 12A 3-Pin2+Tab TO-3


Verical:
Trans Darlington PNP 80V 12A 150000mW 3-Pin2+Tab TO-3 Tray


JANTX2N6051中文资料参数规格
技术参数

耗散功率 150 W

击穿电压集电极-发射极 80 V

最小电流放大倍数hFE 1000 @6A, 3V

额定功率Max 150 W

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 150000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tray

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买JANTX2N6051
型号: JANTX2N6051
描述:Trans Darlington PNP 80V 12A 150000mW 3Pin2+Tab TO-3
替代型号JANTX2N6051
型号/品牌 代替类型 替代型号对比

JANTX2N6051

Microsemi 美高森美

当前型号

当前型号

JANTX2N6052

美高森美

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安森美

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Central Semiconductor

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