JANTX2N5679

TO-39 PNP 100V 1A

FEATURES: ? NPN POWER AMPLIFIER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/580

艾睿:
Implement this PNP JANTX2N5679 GP BJT from Microsemi to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Verical:
Trans GP BJT PNP 100V 1A 1000mW 3-Pin TO-39 Bag