JANTX2N3771

NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR

This specially engineered NPN GP BJT from comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.