PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
JANTX2N3467 Microsemi 美高森美 | 当前型号 | 当前型号 |
2N3467 美高森美 | 完全替代 | JANTX2N3467和2N3467的区别 |
2N4029 美高森美 | 功能相似 | JANTX2N3467和2N4029的区别 |