JANTX2N4399

每PNP大功率硅晶体管合格MIL -PRF-四百三十三分之一万九千五 PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433

Design various electronic circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.