TO-78 NPN 40V 0.6A
FEATURES: ? NPN SILICON DUAL TRANSISTOR ? Qualified per MIL-PRF-19500/495
艾睿:
Design various electronic circuits with this versatile NPN JANTX2N5794 GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
Verical:
Trans GP BJT NPN 40V 0.6A 600mW 6-Pin TO-78 Bag
极性 NPN
耗散功率 0.6 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 600 mW
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 600 mW
安装方式 Through Hole
引脚数 6
封装 TO-78-6
封装 TO-78-6
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N5794 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTXV2N5794 美高森美 | 完全替代 | JANTX2N5794和JANTXV2N5794的区别 |
2N5793 美高森美 | 类似代替 | JANTX2N5794和2N5793的区别 |
JAN2N5794 美高森美 | 类似代替 | JANTX2N5794和JAN2N5794的区别 |