JAN2N6351

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is military qualified up to the JANTXV level.  This TO-33 leaded top-hat has three isolated terminals with terminal four, the collector terminal, tied to the case.

艾睿:
Thanks to Microsemi&s;s NPN JAN2N6351 Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array&s;s maximum emitter base voltage is 12 V. This product&s;s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@1A@5 V|1000@5A@5V|200@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@10mA@5A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 125 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 12 V.

Verical:
Trans Darlington NPN 150V 5A 1000mW 4-Pin TO-33 Box