JANTX2N5796U

JANTX2N5796U图片1
JANTX2N5796U图片2
JANTX2N5796U概述

双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR

FEATURES: ? PNP DUAL SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/496


艾睿:
Compared to other transistors, the PNP JANTX2N5796U general purpose bipolar junction transistor, developed by Microsemi, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 175 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.


Verical:
Trans GP BJT PNP 60V 0.6A 600mW 6-Pin Case U Bag


JANTX2N5796U中文资料参数规格
技术参数

耗散功率 0.6 W

击穿电压集电极-发射极 60 V

最小电流放大倍数hFE 100 @150mA, 10V

额定功率Max 600 mW

工作温度Max 175 ℃

工作温度Min -65 ℃

耗散功率Max 600 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SMD-6

外形尺寸

封装 SMD-6

物理参数

材质 Silicon

工作温度 -65℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JANTX2N5796U
型号: JANTX2N5796U
描述:双PNP硅晶体管 PNP DUAL SILICON TRANSISTOR
替代型号JANTX2N5796U
型号/品牌 代替类型 替代型号对比

JANTX2N5796U

Microsemi 美高森美

当前型号

当前型号

JANTXV2N5796U

美高森美

完全替代

JANTX2N5796U和JANTXV2N5796U的区别

2N5796U

美高森美

完全替代

JANTX2N5796U和2N5796U的区别

JAN2N5796U

美高森美

类似代替

JANTX2N5796U和JAN2N5796U的区别

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