JANTX2N3772

NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR

Bipolar BJT Transistor NPN 60V 20A 6W Through Hole TO-3

艾睿:
The three terminals of this NPN JANTX2N3772 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.