JANTX2N5672

NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 7 V.