PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N6274 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N6284 美高森美 | 类似代替 | JANTX2N6274和JANTX2N6284的区别 |
JANTX2N6277 美高森美 | 类似代替 | JANTX2N6274和JANTX2N6277的区别 |
2N6341 美高森美 | 类似代替 | JANTX2N6274和2N6341的区别 |