JANTXV2N5672

NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR

brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 7 V.