JANTXV2N5684

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

Bipolar BJT Transistor NPN 80V 50A 300W Through Hole TO-204AA TO-3

艾睿:
The versatility of this NPN JANTXV2N5684 GP BJT from Microsemi makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

Verical:
Trans GP BJT NPN 80V 50A 300000mW 3-Pin2+Tab TO-3 Tray