NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTX2N5686 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTXV2N5686 美高森美 | 完全替代 | JANTX2N5686和JANTXV2N5686的区别 |
JAN2N5686 美高森美 | 完全替代 | JANTX2N5686和JAN2N5686的区别 |
2N5686 美高森美 | 完全替代 | JANTX2N5686和2N5686的区别 |