JANTX1N6461US

JANTX1N6461US图片1
JANTX1N6461US图片2
JANTX1N6461US概述

无空隙密封式单向瞬态电压抑制器 Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors

This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors TVS are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak "Standoff" voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded packages for thru-hole mounting.


立创商城:
Vrwm:5V 500W


艾睿:
This JANTX1N6461US TVS diode from Microsemi protects against overvoltages. This device&s;s maximum clamping voltage is 9 V and minimum breakdown voltage is 5.6 V. Its test current is 25 mA. Its peak pulse power dissipation is 500 W. Its maximum leakage current is 3000 μA. This TVS diode has an operating temperature range of -55 °C to 175 °C.


Chip1Stop:
Diode TVS Single Uni-Dir 5V 500W 2-Pin E-MELF


Verical:
TVS Diode Single Uni-Dir 5V 500W 2-Pin E-MELF Bag


JANTX1N6461US中文资料参数规格
技术参数

电路数 1

钳位电压 9 V

最大反向电压(Vrrm) 5V

测试电流 25 mA

脉冲峰值功率 500 W

最小反向击穿电压 5.6 V

击穿电压 5.6 V

工作温度Max 175 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 E-MELF

外形尺寸

封装 E-MELF

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Bag

制造应用 通用

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JANTX1N6461US
型号: JANTX1N6461US
描述:无空隙密封式单向瞬态电压抑制器 Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
替代型号JANTX1N6461US
型号/品牌 代替类型 替代型号对比

JANTX1N6461US

Microsemi 美高森美

当前型号

当前型号

1N6461US

美高森美

完全替代

JANTX1N6461US和1N6461US的区别

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