JANTX2N6353

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is military qualified up to the JANTXV level.

艾睿:
Amplify your current using Microsemi&s;s NPN JANTX2N6353 Darlington transistor in order to yield a higher current gain. This product&s;s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@1A@5 V|1000@5A@5V|200@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@10mA@5A V. This Darlington transistor array&s;s maximum emitter base voltage is 12 V. Its maximum power dissipation is 2000 mW. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has an operating temperature range of -55 °C to 125 °C.