JANSR2N3501UB

JANSR2N3501UB图片1
JANSR2N3501UB概述

UB NPN 150V 0.3A

This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA Radiation Hardness Assurance levels for high-reliability applications.  These devices are also available in TO-5 and low profile TO-39 packaging.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

JANSR2N3501UB中文资料参数规格
技术参数

极性 NPN

耗散功率 1 W

击穿电压集电极-发射极 150 V

集电极最大允许电流 0.3A

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 1000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 UB

外形尺寸

封装 UB

物理参数

材质 Silicon

其他

产品生命周期 Active

符合标准

RoHS标准 Non-Compliant

海关信息

ECCN代码 EAR99

数据手册

在线购买JANSR2N3501UB
型号: JANSR2N3501UB
制造商: Microsemi 美高森美
描述:UB NPN 150V 0.3A

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