JAN2N6849

JAN2N6849概述

MOSFET P-CH 100V 6.5A TO-39

This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications.  This device is also available in a low profile U surface mount package.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.


得捷:
MOSFET P-CH 100V 6.5A TO39


贸泽:
MOSFET P Channel MOSFET


艾睿:
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39


Win Source:
MOSFET P-CH 100V 6.5A TO-39


JAN2N6849中文资料参数规格
技术参数

耗散功率 800mW Ta, 25W Tc

漏源极电压Vds 100 V

额定功率Max 800 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 800mW Ta, 25W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-205

外形尺寸

封装 TO-205

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买JAN2N6849
型号: JAN2N6849
描述:MOSFET P-CH 100V 6.5A TO-39

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