JAN1N5417US

JAN1N5417US概述

Diode Gen Purp 200V 3A b-Melf

This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated.  These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “_Category 1_” metallurgical bond.  These devices are also available in axial-leaded packages for thru-hole mounting.  also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

JAN1N5417US中文资料参数规格
技术参数

正向电压 1.5V @9A

反向恢复时间 150 ns

正向电压Max 1.5V @9A

封装参数

安装方式 Surface Mount

封装 SQ-MELF

外形尺寸

封装 SQ-MELF

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准

含铅标准

数据手册

JAN1N5417US引脚图与封装图
JAN1N5417US引脚图
JAN1N5417US封装图
JAN1N5417US封装焊盘图
在线购买JAN1N5417US
型号: JAN1N5417US
描述:Diode Gen Purp 200V 3A b-Melf
替代型号JAN1N5417US
型号/品牌 代替类型 替代型号对比

JAN1N5417US

Microsemi 美高森美

当前型号

当前型号

JANTXV1N5417US

美高森美

完全替代

JAN1N5417US和JANTXV1N5417US的区别

1N5417US

美高森美

类似代替

JAN1N5417US和1N5417US的区别

JANTX1N5417US

美高森美

类似代替

JAN1N5417US和JANTX1N5417US的区别

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