KSC1008RTA

NPN Epitacial硅晶体管 NPN Epitacial Silicon Transistor

Features

• Low frequency amplifier medium speed switching.

• High Collector-Base Voltage : VCBO=80V.

• Collector Current : IC=700mA

• Collector Power Dissipation : PC=800mW

• Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

• Non suffix “-C” means Side Collector 1.Emitter 2.Base 3.Collector

• Complement to KSA708

艾睿:
Trans GP BJT NPN 60V 0.7A 3-Pin TO-92 Ammo