IXFH320N10T2

N沟道 100V 320A

N-Channel 100V 320A Tc 1000W Tc Through Hole TO-247AD IXFH

得捷:
MOSFET N-CH 100V 320A TO247AD

立创商城:
N沟道 100V 320A

贸泽:
MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A

艾睿:
Compared to traditional transistors, IXFH320N10T2 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1000000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Verical:
Trans MOSFET N-CH 100V 320A 3-Pin3+Tab TO-247

DeviceMart:
MOSFET N-CH 100V 320A TO-247

Win Source:
MOSFET N-CH 100V 320A TO-247