复合晶体管NPN硅外延平面型对于开关/数字电路 Composite Transistors, Silicon NPN epitaxial planar type For switching/digital circuits
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 35 截止频率fT Transtion FrequencyfT| 150MHz 耗散功率Pc Power Dissipation| 0.2W/200mW Description & Applications| Silicon NPN epitaxial planer transistor For digital circuits Features lCosts can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 描述与应用| NPN硅外延平面晶体管的 用于数字电路 特性 可减少通过lCosts设备的小型化和 减少部件的数量。 迷你型包装，使瘦身的设备和通过自动插入磁带包装盒包装