MUBW15-12A7

MUBW15-12A7概述

Trans IGBT Module N-CH 1200V 35A 105000mW 24Pin E2-Pack

This secure and fast infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.


得捷:
IGBT MODULE 1200V 35A 180W E2


艾睿:
This secure and fast MUBW15-12A7 infineon IGBT module from Ixys Corporation is perfect for your circuit. Its maximum power dissipation is 105000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has an operating temperature range of -40 °C to 125 °C. It is made in a hex configuration.


Verical:
Trans IGBT Module N-CH 1200V 35A 180000mW 24-Pin E2-Pack


MUBW15-12A7数据文档
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