晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 95 hFE
Look no further than the RF bi-polar junction transistor, developed by Semiconductors, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
得捷:
RF TRANS NPN 12V 10.5GHZ SOT143R
贸泽:
射频RF双极晶体管 NPN wideband silicon RF transistor
e络盟:
晶体管 双极-射频, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, 95 hFE
艾睿:
Look no further than the BFU520XRR RF bi-polar junction transistor, developed by NXP Semiconductors, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.