MRF8HP21130HSR3

W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V

Overview

The MRF8HP21130HR3 and are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* Advanced High Performance In-Package Doherty

* Production Tested in a Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

* NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2110 MHz| 14.2| 46.4| 7.9| –35.4

2140 MHz| 14.1| 45.7| 7.7| –35.3

2170 MHz| 14.0| 45.1| 7.6| –34.8

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW Output Power 3 dB Input Overdrive from Rated Pout

* Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW