PTFB092707FHV1R0XTMA1

High Power RF LDMOS FET 270W, 28V, 925 – 960MHz

Summary of Features:

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Broadband internal input and output matching

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Typical pulsed CW performance 10 μs pulse width10%, duty cycle, class AB, 960 MHz, 28 V

\- Output power at P1dB = 250 W

\- Efficiency = 52%

\- Gain = 18.5 dB

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Typical single-carrier WCDMA performance, 960 MHz, 28 V, 7.5 dB PAR @ 0.01% probability on CCDF

\- Output power = 63 W

\- Efficiency = 33%

\- Gain = 19.5 dB

\- ACPR = –35 dBc @ 3.84 MHz

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Capable of handling 10:1 VSWR @28 V, 220 W CW output power

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Integrated ESD protection

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Low thermal resistance

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Pb-free and RoHS compliant