BSZ900N15NS3GATMA1

INFINEON  BSZ900N15NS3GATMA1  晶体管, MOSFET, N沟道, 13 A, 150 V, 0.074 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 150V 13A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ900N15NS3GATMA1, 13 A, Vds=150 V, 8引脚 TSDSON封装

贸泽:
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 150 V, 13 A, 0.074 ohm, TSDSON, 表面安装

艾睿:
Make an effective common gate amplifier using this BSZ900N15NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 150V 13A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 150V 13A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ900N15NS3GATMA1  MOSFET Transistor, N Channel, 13 A, 150 V, 0.074 ohm, 10 V, 3 V