NXP PMGD8000LN 双路场效应管, MOSFET, 双N沟道, 125 mA, 30 V, 8 ohm, 4 V, 1.5 V
Dual Trench MOS logic level FET Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS technology. Features Trench MOS technology Very fast switching Logic level compatible Subminiature surface mount package Applications Battery management High-speed switch Low power DC-to-DC converter.
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NXP PMGD8000LN 双路场效应管, MOSFET, 双N沟道, 125 mA, 30 V, 8 ohm, 4 V, 1.5 V
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