BSC190N15NS3GATMA1

INFINEON  BSC190N15NS3GATMA1  晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 150V 50A TDSON-8-1

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC190N15NS3GATMA1, 50 A, Vds=150 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSC190N15NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP

Chip1Stop:
Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 150V 50A TDSON-8