UCC27512MDRSTEP

具有 5V UVLO、采用 SON 封装的增强型产品 4A/8A 单通道栅极驱动器 6-SON -55 to 125

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink asymmetrical drive peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout UVLO circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.