VISHAY SIHB24N65E-GE3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
The is a 700V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
型号 | 品牌 | 下载 |
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SIHB24N65E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB15N65E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB20N50E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB15N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB22N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB22N60E-E3 | Vishay Semiconductor 威世 | 下载 |
SIHB30N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB33N60EF-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB33N60E-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB28N60EF-GE3 | Vishay Semiconductor 威世 | 下载 |
SIHB22N65E-GE3 | Vishay Semiconductor 威世 | 下载 |