RFPA5026

RFPA5026概述

Amplifier, Power

RFMD’s is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount DFN package.
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P1dB = 33dBm at 5V * 802.11g 54 Mb/s Class AB Performance * POUT = 25dBm at 2.5% EVM, VCC 5V, 680mA * On-Chip Output Power Detector * Input Prematched Input and Output * Proprietary Low Thermal Resistance Package * Power Up/Down control < 1μs
RFPA5026数据文档
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